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A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type

Categories Tip Power Transistors
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
MOQ: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day
Model Number: A94
VCBO: -400V
VCEO: -400V
VEBO: -5V
Product name: silicon semiconductor triode type
Tj: 150Š
Power Mosfet Transistor: TO-92 Plastic-Encapsulate
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    A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type

    TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP)


    FEATURE

    High Breakdown Voltage


    MARKING

    A94=Device code

    Solid dot=Green molding compound device, if none,the normal device

    Z=Rank of hFE

    XXX=Code



    ORDERING INFORMATION

    Part NumberPackagePacking MethodPack Quantity
    A94TO-92Bulk1000pcs/Bag
    A94-TATO-92Tape2000pcs/Box



    MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

    SymbolParameterValueUnit
    VCBOColl ector-Base Voltage-400V
    VCEOColl ector-Emitter Voltage-400V
    VEBOEmitter-Base Voltage-5V
    ICColl ector Current -Continuous-0.2A
    ICMColl ector Current -Pulsed-0.3A
    PCColl ector Power Dissipation625mW
    RθJAThermal Resist ance From Junction To ambient200℃ /W
    TJJunction Temperature150
    TstgStorage Temperature-55~+150


    ELECTRICAL CHARACTERISTICS

    Ta=25 Š unless otherwise specified



    ParameterSymbolTest conditionsMinTypMaxUnit
    Collector-base breakdown voltageV(BR)CBOIC=-100µA,IE=0-400V
    Collector-emitter breakdown voltageV(BR)CEOIC=-1mA,IB=0-400V
    Emitter-base breakdown voltageV(BR)EBOIE=-100µA,IC=0-5V
    Collector cut-off currentICBOVCB=-400V,IE=0-0.1μA
    Collector cut-off currentICEOVCE=-400V,IB=0-5μA
    Emitter cut-off currentIEBOVEB=-4V,IC=0-0.1μA

    DC current gain

    hFE(1)VCE=-10V, IC=-10mA80300
    hFE(2)VCE=-10V, IC=-1mA70
    hFE(3)VCE=-10V, IC=-100mA60
    hFE(4)VCE=-10V, IC=-50mA80

    Collector-emitter saturation voltage

    VCE(sat)(1)IC=-10mA,IB=-1mA-0.2V
    VCE(sat)(2)IC=-50mA,IB=-5mA-0.3V
    Base-emitter saturation voltageVBE(sat)IC=-10mA,IB=-1mA-0.75V
    Transition frequencyfTVCE=-20V, IC=-10mA,f=30MHz50MHz


    CLASSIFICATION OF hFE(2)

    RANKABC
    RANGE80-100100-200200-300

    Typical Characteristics


    Package Outline Dimensions

    SymbolDimensions In MillimetersDimensions In Inches
    MinMaxMinMax
    A3.3003.7000.1300.146
    A11.1001.4000.0430.055
    b0.3800.5500.0150.022
    c0.3600.5100.0140.020
    D4.3004.7000.1690.185
    D13.4300.135
    E4.3004.7000.1690.185
    e1.270 TYP0.050 TYP
    e12.4402.6400.0960.104
    L14.10014.5000.5550.571
    01.6000.063
    h0.0000.3800.0000.015



    Quality A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type for sale
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