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Higher Uniformity Thermal Oxide Wafer Excellent Dielectric Layer As An Insulator

Categories Technical Ceramic Parts
Brand Name: ZG
Model Number: MS
Certification: CE
Place of Origin: CHINA
MOQ: 1 piece
Price: USD10/piece
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 10000 pieces per month
Delivery Time: 3 working days
Packaging Details: Strong wooden box for Global shipping
Application: integrated circuits , detector / sensor device , MEMS fabrication, opto-electronic components, and solar cells
Diameter: Ø 2" / Ø 3" / Ø 4" / Ø 6" / Ø 8" / Ø 12"
Oxide Thickness: 100 A ~ 6 um
Grade: Prime / Test / Dummy grade
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Higher Uniformity Thermal Oxide Wafer Excellent Dielectric Layer As An Insulator


Thermal Oxide Wafer, higher uniformity, and higher dielectric strength , excellent dielectric layer as an insulator


Thermal oxide or silicon dioxide layer is formed on bare silicon surface at elevated temperature in the presence of an oxidant , the process is called thermal oxidation. Thermal oxide is normally grown in a horizontal tube furnace , at temperature range from 900°C ~ 1200°C , using either a "Wet" or "Dry" growth method . Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator . In most silicon- based devices, thermal oxide layer play an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics . we provides thermal oxide wafer in diameter from 2" to 12 " , we always choose prime grade and defect free silicon wafer as substrate for growing high uniformity thermal oxide layer to meet your specific requirements . Contact us for further information on price & delivery time .


Thermal Oxide Capability

Typically after thermal oxidation process , both front side and back side of silicon wafer have oxide layer . In case only one side oxide layer is required , we can remove back oxide and offer one side thermal oxide wafer for you .

Oxide thickness rangeOxidation techniqueWithin wafer
uniformity
Wafer to wafer
uniformity
Surface processed
100 Å ~ 500Ådry oxide+/- 5%+/- 10%both sides
600 Å ~ 1000Ådry oxide+/- 5%+/- 10%both sides
100 nm ~ 300 nmwet oxide+/- 5%+/- 10%both sides
400 nm ~ 1000 nmwet oxide+/- 3%+/- 5%both sides
1 um ~ 2 umwet oxide+/- 3%+/- 5%both sides
3 um ~ 4 umwet oxide+/- 3%+/- 5%both sides
5 um ~ 6 umwet oxide+/- 3%+/- 5%both sides

Thermal Oxide Wafer Application


100 ATunneling Gates
150 A ~ 500 AGate Oxides
200 A ~ 500 ALOCOS Pad Oxide
2000 A ~ 5000 AMasking Oxides
3000 A ~ 10000 AField Oxides

Product Specification

Qxidation techniqueWet oxidation or Dry oxidation
DiameterØ 2" / Ø 3" / Ø 4" / Ø 6" / Ø 8" / Ø 12"
Oxide thickness100 A ~ 6 um
Tolerance+/- 5%
SurfaceSingle side or double sides oxide layer
FurnaceHorizontal tube furnace
GaseHydrogen and Oxygen gases
Temperature900 C ° - 1200 C °
Refractive index1.456

Quality Higher Uniformity Thermal Oxide Wafer Excellent Dielectric Layer As An Insulator for sale
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