Small Die Size Low Voltage MOSFET For Signal Conditioning TO-263C
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...Low Voltage MOSFET For Signal Conditioning TO-263C Product Description: One of the key advantages of the Low Voltage MOSFET is its ability to minimize switching loss. This is achieved through the MOSFET's low gate charge, which reduces the amount of energy required to switch the device on and off. This, in turn, leads to improved system efficiency and higher overall performance. The Low Voltage MOSFET......
Guangdong Lingxun Microelectronics Co., Ltd
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Low Voltage MOSFET Trench Process High Efficiency Motor Driver for 5G Base Station
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... utilizing a sophisticated Trench/SGT (Shielded Gate Trench) structure process, this MOSFET stands at the forefront of technology, delivering exceptional performance in a variety of demanding environments. The Trench Low Voltage MOSFET, in particular, is...
Reasunos Semiconductor Technology Co., Ltd.
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Low Voltage Mosfet Portable Devices Use SOT-23 P Channel BC2301
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... Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.3 A Pulsed Drain Current IDM -10 A Continuous Source-Drain Diode Current IS...
Guangdong Huixin Electronics Technology Co., Ltd.
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Low Voltage Mosfet Power Module SMD Through Hole Versions PKF4510PI
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... (typ at 5V) • 1,500 Vdc isolation voltage • MTBF > 4.9 million hours at +50°C pin temperature (+40°C ambient) • Low EMI in conformance with class A in CISPR 22 and FCC part 15J The MacroDens3–7W PKF 4000 I series true component level on...
Anterwell Technology Ltd.
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Mosfet Tube FDV301N High Performance Low Voltage MOSFET Transistor
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...MOSFET Power Electronics The FDV301N is an N-channel power MOSFET designed for high power switching applications. It is suitable for use in high-efficiency power conversion circuits, such as DC-DC converters, AC-DC converters, and motor control circuits. The device is rated at 60V and 18A, and features low on-resistance, low gate charge, and low capacitance for fast switching speeds. Features: • N-Channel MOSFET......
Shenzhen Sai Collie Technology Co., Ltd.
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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V
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...Mosfet Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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NPN Low Vcesat Mosfet Power Transistor PNP complement PBSS4160T
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...LOW VCESAT MOSFET POWER TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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ZXMN10A09KTC Power Mosfet Transistor switching power mosfet low power mosfet high voltage 100V N-CHANNEL ENHANCEMENT
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...MOSFET IN DPAK SUMMARY V(BR)DSS=100V : RDS(on)=0.085 ; ID=7.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. FEATURES • Low on-resistance • Fast switching speed • Low......
ChongMing Group (HK) Int'l Co., Ltd
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MIC5020YM-TR IC Low Side Mosfet Driver / High Speed Gate Driver SOIC-8
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...Low Side MOSFET Driver MIC5020YM Manufacturer: Microchip Product Type: Door Drivers Product: MOSFET Gate Drivers Type: Low-Side Installation style: SMD/SMT Package/Case: SOIC-8 Driver Quantity: 1 Driver Number of outputs: 1 Output Supply Voltage - Min: 11 V Supply Voltage......
Eastern Stor International Ltd.
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Original High Voltage Mosfet Power Transistor Mosfet Driver Using Transistor
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..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Beijing Silk Road Enterprise Management Services Co.,LTD
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